860A型高强度溅射离子源的改进

Improvements of Model 860A high intensity sputter source

球面电离器的采用使溅射区域缩小到直径～0.75mm;用3根远离溅射区的瓷柱取代原来绝缘阴极的瓷环,可使溅射电压在10kV以内稳定工作。这些改进措施使860A的部分负离子品种的流强提高了近300％,传输效率得以提高,从而为2×1.7MV串列加速器进行大注量高能离子注入改善了条件。

Effective measures have been adopted for increasing the negative ion beam intensity and decreasing the emittance of the Model 860A high intensity sputter source through enhancing the cathode voltage and rebuilding a focusing geometry electrode system. By using a Ta sheet spherical geometry ionizer the sputtering region has been narrowed down to a diameter of ~ 0.75mm. Three porcelain rods replacing the original cathode insulator make the target voltage reach 10kV. The negative ion beam intensity of some species has increased by 300% and the transmission efficiency is improved. These measures have improved operation conditions of the 2×1.7MV Tandetron for large dose high energy ion implatation.