摘要
本文提出了一种BCD工艺下实现的高耐压LDPMOS和VDNMOS功率器件互补结构,其优点是高低压兼容性好、耐压高、易集成。MEDICI模拟结果表明击穿电压可达200V,可应用于PDP高压驱动等高压集成电路。
A new structure of high voltage device (Lateral P-channel and Vertical N-channel MOSFET) is presented. A typical BCD process is used to implement this device. The advantage of the device is its good compatibility between high and low voltage and easy integration. Also, The breakdown voltage is approximately 200V from MEIDCI simulation. It can be implied in plasma display panel (PDP) scan driver IC etc.
出处
《电子质量》
2004年第7期68-69,共2页
Electronics Quality
