激光诱导单晶硅的液相腐蚀

Laser-Induced Aqueous Etching of Monocry stalling Silicon

本文研究了利用聚焦的Ar^+激光束对单晶硅液相腐蚀的原理与特性。考察了腐蚀速率随激光功率密度的变化,讨论了腐蚀坑的形状与腐蚀条件关系(功率、时间),最后给出几点结论。

Principles and characteristics of laser-induced aqueous etching (LIAE) of silicon using a focused argon-ion laser beam have been investigated. The dependence of etch rate on laser intensity is observed.The effects of etch parameters (power, time) on the etch profile are also discussed.Finally , some conclusions about LIAE for Si crystal are given.