GaAs大面积液相外延载流子均匀性的研究

The Research on Carrier Uniformity of GaAs Large Area Liquid Phase Epitaxy

采用液相外延技术在(100)GaAs衬底上生长无位错外延层,对外延片的载流子均匀性进行了测试和分析。为了改善载流子分布的均匀性,采用了脱氧15h,熔源8h以上,再同一源重复使用、多次生长的液相外延工艺。同时,为了满足实验的需要,设计了一种新型推拉式石墨舟。实验结果表明此方法是可取的。

The free-dislocation GaAs epitaxiial layers have been made grown on the (100) GaAs substracts by using liquid phase epitaxial technical method. The uniformity of carrier distribution was measured and analysed. In order to improve the uniformity of carrier distribution, it＇s by deoxida-tion 15 hours. and making the source melted for more than 8 hours, and then using the same source to grow repeatedly. At the same time, a new kind of pushing graphite boat was designed for the sake of meeting the needs of the experiment. the experiment results showed this method is available.