ICP刻蚀技术研究

Etching Technique of Inductive Couple Plasmas

介绍感应耦合等离子(ICP)的刻蚀原理,研究以SF6为刻蚀气体,不同的电极功率、气体流量、反应室压强、反应室温度、样片开槽宽度等工艺参数对Si和SiO2的刻蚀速率和选择比的影响.实验结果表明,提高RF1功率和SF6流量,可以提高刻蚀速率和选择比,提高RF2功率虽能提高刻蚀速率但降低选择比,反应室压强上升到1.2Pa时,刻蚀速率达最大值,刻蚀温度为零度时,Si的刻蚀速率最大,开槽宽度对刻蚀速率影响不大.

The etching principle of inductive couple plasmas was introduced in this paper.The etching was performed by SF_6.The important parameters,such as ICP source power,the flow of SF_6,pressure,chuck temperature and opening sizes of the trench etc that affect the etching rate and selectivity were studied.The experimental results show that,high etching rate and selectivity corresponded to high RF_1 and high flow of SF_6,and high RF_2 power corresponded to high etching rate but low selectivity.The etching rate was the highest when chuck temperature was 1.2 Pa. 0℃ etching temperature corresponded to the highest etching rate of Si. There were little relations between opening size of trench and etching rate.