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S-5N全固态重复频率脉冲发生器 被引量：13

S-5N all-solid-state repetitive frequency pulsed generator
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摘要 　主要介绍S 5N的结构及测试实验结果。S 5N型全固态重复频率脉冲发生器是目前国际上同类源中峰值功率和平均功率均为最大的一台。随负载大小的变化,S 5N脉冲发生器的输出电压为400～600kV,输出电流2～3kA,输出脉冲半高宽40～50ns,单脉冲输出能量40～65J。S 5N脉冲发生器在300Hz重复频率条件下可连续工作,500Hz重复频率条件下可连续工作3min,平均输出功率高达30kW。 Northwest Institute of Nuclear Technology has imported an SOS-based pulsed generator with capacity of repetitive operating from Russia. The generator has the highest peak power and the highest average power among similar generators around the world. The structure is introduced and testing results are described in this paper. With varying of load, the S-5N generator has output voltage of 400-600 kV, output current of 2-3 kA, FWHM of 40-60 ns and output energy of 40-65 J per pulse. In the condition of 500 Hz repetitive operating, the average output power is up to 30 kW. The generator can operate continuously at repetition frequency of 300 Hz and 3min at 500 Hz.
作者 苏建仓 丁臻捷 丁永忠 宋晓欣 宋志敏 秋实 黄文华
机构地区 西北核技术研究所
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2004年第10期1337-1340,共4页 High Power Laser and Particle Beams
基金 国家863计划项目资助课题
关键词 半导体断路开关 脉冲发生器 磁开关 输出功率 输出电流 Equivalent circuits Operations research Semiconductor switches
分类号 TN78 [电子电信—电路与系统]
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参考文献8

  • 1Kotov Y A, Mesyats G A, Rukin S N, et al. A novel nanosecond semiconductor opening switch for megavolt repetitive pulsed power technology: experiment and applications[A]. Proceeding 9th IEEE Int Pulsed Power Conf[C]. New Mexico: Albuquerque, 1993. 134-139
  • 2Rukin S N, Mesyats G A, Darznek S A, et al. SOS-based pulsed power: development and applications[A]. Proceeding of 12th IEEE Int Pulsed Power Conf[C]. California, USA: Monterey, 1999. 153-156.
  • 3Lyubutin S K, Mesyats G A, Rukin S N, et al. Namosecond nanosecond microwave generator based on the relativistic 38GHz backwardwave oscillator and all-solid-state pulsed power modulator[A]. Proceeding of 12th IEEE Int Pulsed Power Conf[C]. California, USA
  • 4Pokryvailo A, Yankelevich Y, Bornshtein A, et al. Investigation of electrical parameters and chemical activity of high-power short pulsed corona discharge[A]. Proceeding of 12th IEEE Int Pulsed Power Conf[C]. California, USA: Monterey, 1999, 1349-1352.
  • 5Yalandin M I, Lyubutin S K, Oulmascoulov M R, et al. Subnanosecond modulator possessing a 700MW peak power and average power of 1.5kW at repetition frequency of 3.5 kHz[A]. Proceeding of 13th IEEE Int. Pulsed Power Conf[C]. Nevada, USA: Las Vegas, 2001.
  • 6Rukin S N, Alichkin E A, Lyubutin S K, et al. Ultra-high-power repetitive solid state DBD-based switching[A]. Proceeding of 13th IEEE Int Pulsed Power Conf[C]. Nevada, USA: Las Vegas, 2001. 329-332.
  • 7Rukin S N. High-power nanosecond pulse generators based-on semiconductor opening switch[J]. Instruments and Experimental Techniques, 1999,42(4) :439-467.
  • 8苏建仓,丁永忠,宋志敏,丁臻捷,刘国治,刘纯亮.半导体断路开关实验研究[J].强激光与粒子束,2002,14(6):949-953. 被引量：10

二级参考文献11

  • 1Kotov Y A, Mesyats G A, Rukin S N, et al. A novel nanosecond semiconductor opening switch for megavolt repetitive pulsed power technology: experiment and applications[A]. Proc 9th IEEE Int Pulsed Power Conf[C]. Albuquerque, NM, 1993 .134-139.
  • 2Mesyats G A, RukinS N, Lyubutin S K, et al. Semiconductor opening switch research at IEP[A]. Proc 10th IEEE Int Pulsed Power Conf[C]. Albuquerque, USA, 1995.1:298-305.
  • 3Lyubutin S K, Mesyats G A, Rukin S N, et al. Repetitive nanosecond all-solid-state pulsers based on SOS diodes[A]. Proc 11th IEEE Int. Pulsed Power Conf[C]. Baltimore, USA, 1997. 992-998.
  • 4Rukin S N, Mesyats G A, Darznek S A, et al. SOS-based power development and applications[A]. Proc 12th IEEE Int. Pulsed Power Conf[C]. Monterey, USA, 1999, 153
  • 5Katsuki S, Majima T, Nagata K, et al. Inactivation of bacillus stearothermophilus by pulsed electric field[J]. IEEE Trans Plasma Science,2000, 28(1):155-160.
  • 6Rukin S N, Mesyats G A, Ponomarev A V, et al. Megavolt repetitive SOS-based generator[A]. Proc 13th IEEE Int Pulsed Power Plasma Science Conf[C]. 2001. 340.
  • 7Teramoto Y, Deguchi D, Katsuki S, et al. All-solid-state trigger-less repetitive pulsed power generator utilizing semiconductor opening switch[A]. Proc 13th IEEE Int Pulsed Power Plasma Science Conf[C]. 2001, 480.
  • 8Darznek S A, Mesyats G A, Rukin S R. Theoretical model of the SOS effect[A]. Proc 11th Int Conf on High Power Particle Beams[C]. Prague, Czech Republic, 1996.2 :1241-1244.
  • 9Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switch[J]. IEEE Trans Plasma Science, 2000,28 (5):1540.
  • 10Engelko A, Bluhm H. Simulation of semiconductor opening switch physics[A]. Proc13th IEEE Int Pulsed Power Plasma Science Conf[C]. 2001.358.

共引文献9

同被引文献148

引证文献13

二级引证文献112

强激光与粒子束
2004年 第10期

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