期刊文献+

超薄有源层谐振腔增强型调制器 被引量:4

Resonant-cavity Enhanced Optical Modulator with Ultrathin Active Layer
下载PDF
导出
摘要 提出利用超薄有源层制备高性能谐振腔增强型 (RCE)半导体电吸收调制器件的可能性 ,并与波导型器件进行性能对比 ;对透射和反射两种类型器件优化分析了器件结构 ,进行了性能比较 ,结果表明 :在插入损耗相当的情况下 。 A resonant-cavity enhanced optical modulator is proposed, with an ultrathin active layer in the cavity. This kind of device has been compared with normal waveguide EA modulator, and the device structures are optimized theoretically. The two kinds of device of transmission and reflection modeare compared, the results showed that the reflection device has higher extinction ratio in same level of insertion loss.
出处 《光子学报》 EI CAS CSCD 北大核心 2004年第10期1196-1199,共4页 Acta Photonica Sinica
基金 国家自然基金 (6 0 1370 2 0 ) 国家" 973计划"(TG2 0 0 0 0 36 6 0 3 2 0 0 1CB30 95 0 6 )资助项目
关键词 调制器 量子阱 RCE Optical modulator Quantum wells RCE
  • 相关文献

参考文献2

  • 1Newey J.Optical modulators get ready for a high-speed network future,compound semiconductors.2002.march
  • 2Lentine A L, Goossen K W, Walker J A,et al.High-speed optoelectronic VLSI switching chip with>4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS. IEEE J Selected Topics in Quantum Electron,1996,2(1):77

同被引文献47

  • 1王章涛,樊中朝,夏金松,陈少武,余金中.SOI热光调制器[J].Journal of Semiconductors,2004,25(10):1315-1318. 被引量:2
  • 2毛容伟,成步文,李传波,左玉华,滕学公,罗丽萍,余金中,王启明.硅基1.55μm可调谐共振腔窄带光电探测器的研究[J].光子学报,2005,34(12):1783-1787. 被引量:3
  • 3韩勤,彭红玲,杜云,倪海桥,赵欢,牛智川,吴荣汉.1.55μm低温生长GaAs谐振腔增强型探测器[J].光子学报,2006,35(4):549-551. 被引量:6
  • 4朱彬,韩勤,杨晓红,李文兵.高功率共振腔增强型光电探测器研究进展[J].半导体光电,2007,28(3):306-311. 被引量:4
  • 5ISLAM M S,WU M C. Recent advances and future prospects in high-speed and high saturation-current photodetectors[C]. SPIE,2003,5246:448-457.
  • 6TULCHINSKY D A, LI Xiao wei, LI Ning, et al. High- saturation current wide bandwidth photodetectors[J]. IEEE J Sel Topics Quantum Electronics, 2004,10(4) : 702-708.
  • 7LI N,LI X W,DEMIGUEL S,et al. High saturation current charge compensated InGaAs -InP uni-traveling carrier photodiode[J]. IEEE Photon Technol Lett, 2004,16 ( 3 ) : 864-866.
  • 8LIU P L,WILLIAMS K J,FRANKEL M Y,et al. Saturation characteristics of fast photodetectors [ J ]. IEEE Trans Microwave Theory Tech, 1999,47(7) : 1297-1303.
  • 9ITO H,FURUTA T,KODAMA S. InP/InGaAs uni-travelling-carrier photodiode with 310GHz bandwidth[J]. Electron Lett, 2000,36(21) : 1809-1810.
  • 10LI X, SEMIGUEL S, LI N, et al. Backside illuminated high saturation current partially depleted absorber photodetectors [J]. Electron Lett ,2003,39(20) :1466-1467.

引证文献4

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部