摘要
提出利用超薄有源层制备高性能谐振腔增强型 (RCE)半导体电吸收调制器件的可能性 ,并与波导型器件进行性能对比 ;对透射和反射两种类型器件优化分析了器件结构 ,进行了性能比较 ,结果表明 :在插入损耗相当的情况下 。
A resonant-cavity enhanced optical modulator is proposed, with an ultrathin active layer in the cavity. This kind of device has been compared with normal waveguide EA modulator, and the device structures are optimized theoretically. The two kinds of device of transmission and reflection modeare compared, the results showed that the reflection device has higher extinction ratio in same level of insertion loss.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2004年第10期1196-1199,共4页
Acta Photonica Sinica
基金
国家自然基金 (6 0 1370 2 0 )
国家" 973计划"(TG2 0 0 0 0 36 6 0 3
2 0 0 1CB30 95 0 6 )资助项目
关键词
调制器
量子阱
RCE
Optical modulator
Quantum wells
RCE