一种新型阳极氧化多孔硅技术

New Anodic Oxidized Technology OF Porous Silicon

在适当条件下氧化多孔硅是提高多孔硅发光强度的良好途径,提出了一种新型阳极氧化方法,并探讨了该方法所涉及的阳极氧化条件。采用含CH3CSNH2的HF酸水溶液作为氧化剂对初始多孔硅进行了湿法阳极氧化,发现氧化使多孔硅光致发光性质得到极大改善,进而研究了氧化电流、氧化温度、氧化时间等一系列因素对氧化多孔硅光致发光强度的影响,并给出了合理解释。实验发现,在1mA,10min,60℃的氧化条件下,采用阳极氧化技术使多孔硅发光强度增强了18倍。

Oxidizing porous silicon in proper condition is a good approach to improve PS photoluminescence intensity.The article for the first time raised a new anodic oxidized technology of PS.We used electrolyte containing CH_3CSNH_2 to oxidize initial PS, and found that this method can improve the quality of photoluminescence, it can not only enhance the PL intensity greatly, but also increase the photoluminescence stability. Then we studied the oxidizing conditions(current, time, temperature etc.)which affect photoluminescence intensity and stability of PS and gave reasonable explanations. The small oxidizing current can repair the nanostructure of PS, the appropriate oxidizing time can limit the probability of nonradiative recombination, while the optimum oxidizing temperature is propitious to the transit of charge which can make the concentration of electrolyte balanceable, hence, the photoluminescence of oxidized PS is improved evidently. We discovered that the anodic oxidized technology of PS made the integral intensity of photoluminescence enhanced 18 times when in the optimum oxidized conditions of (1 mA,10 min,60 ℃).