摘要
叙述了光刻胶(Photoresists)的工作原理,分类和g线胶、i线胶到DUV胶等的发展。近年来,芯片集成度从1G向4G和64G的需求,促使光刻胶和加工技术有了更新的发展。
The g - line, i - line and DUV photoresist were introduced, and their reactive mechanism and dassification were narrated. In recer years, the requirement of integrate scale of wafer from 1G, 4G, and 64G impel photoresists and processing technology to greater development.
出处
《上海化工》
CAS
2004年第7期33-37,共5页
Shanghai Chemical Industry
