n型高阻硅单晶电阻率均匀性的控制

Procedures to Control the Radial Resistivity Uniformity of n_Type High Resistivity Si Crystal

通过不同工艺的拉晶实验,发现晶转、拉速、热对流等因素对高阻n〈111〉硅单晶径向电阻率均匀性有所影响。采用水平磁场拉晶工艺,通过提高晶转、增大拉速、减小热对流等,可有效提高硅单晶径向电阻率均匀性。

With experiments of high resistance n〈111〉 Si crystal grouth ,we found that theseed rotation rate ,lift rate and thermal convection could affect the uniformity of radial resistivity inn〈111〉Silicon crystal .By increasing seed rotation rate,lift rate and decreasing thermal convec-tion with magnetic field were beneficial to the uniformity of the radial resistivity .