摘要
由于GaN薄膜有希望应用在紫外或蓝光发光器件、探测器以及高速场效应晶体管、高温电子器件,GaN材料是当前研究的一个焦点。本文简要介绍了GaN薄膜的制备、衬底选择、掺杂、缓冲层、发光机制和表征等方面的最新进展,指出GaN材料进一步发展需要解决的关键技术问题。
GaN thin films are the focus of current research because of the promise for use as UV or blue emitters, detectors, high-speed field-effect transistor, and high-temperature electronic devices. Recent development for GaN thin films in preparation, choice of substrates, doping, buffer layer, photoluminescence mechanism and characterization was briefly described and reviewed. The key technologies to be solved for GaN thin films were pointed out.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2004年第5期537-540,544,共5页
Journal of Functional Materials
关键词
GAN薄膜
研究进展
发光机制
GaN thin films
research progress
photoluminescence mechanism
