摘要
采用研制的大体积射频等离子体红外加热化学气相沉积设备,在600℃的低温下,在5cm×5cm大的Ni片上生长出碳纳米管薄膜。扫描电镜(SEM)和透射电镜(TEM)观察显示,碳纳米管薄膜具有很好的均匀性,管径大约为70～90nm。随机地对样品的3个不同区域进行了场发射特性的测试,结果表明这种薄膜具有良好的场发射特性及一致性。开启电场约为2.4V/μm,在电场为6.6V/μm时的发射电流密度达到1635μA/cm2。实验结果表明在低温条件下,大面积生长场发射用碳纳米管薄膜是可行的。
The carbon nanotubes thin film grown on the surface of 5 cm × 5 cm Ni plate substrate was obtained at 600°C temperature by using large volume radio frequency plasma enhanced infrared thermal chemical vapor deposition. Carbon nanotubes with uniform diameter around 70-90 nm were found by scanning electron microscope and transmission electron microscope. The stochastic measurement at three different areas show good field emission characteristics and uniformity. The turn on field of electron emission from the CNTs film was about 2.4 V/μm. The current density was 1635 μA/cm2 at the applied electric field 6.6 V/μm. It was believed that growth of large area CNTs film for field emission under lower temperature was feasible.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2004年第5期590-592,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(60036010)
教育部博士点基金资助项目(2000069823)
国家高技术研究发展计划(863计划)重点基金资助项目(2001AA313090)
关键词
碳纳米管
大面积Ni衬底
化学气相沉积
场致发射特性
Electric fields
Electron emission
Nickel
Plasma enhanced chemical vapor deposition
Scanning electron microscopy
Substrates
Thin film devices
Transmission electron microscopy
