GaInAs/GaAs应变量子阱能带结构的计算

Calculation of energy band structure of GaInAs/GaAs guantum well

讨论了GaInAs/GaAs应变量子阱结构的应变效应 ,给出了量子阱层的临界厚度随In组份的变化关系。由克龙尼克 -潘纳模型计算了GaInAs/GaAs应变量子阱的量子化能级 ,给出了cl -hhl跃迁对应的发射波长随阱宽和In组份的变化关系曲线 ,并与实验测量的GaInAs/GaAs量子阱的发射波长进行了比较 ,基本一致。与此同时 ,对GaInAs/GaAs应变量子阱向长波长方向的发展也进行了计算分析 。

The strain effect of GaInAs/GaAs quantum well is discussed,and the critical layer thickness of the quantum well under different indium fractions is obtained.Then by using Kronig-Penney model,the conduction band and valence band energy levels in GaInAs/GaAs quantum wells are calculated,and the emitting wavelength for the cl-hhl transition energy is also given in the paper.Comparing the calculation results to the GaInAs/GaAs quantum well experimental results,it is normally the same.At the same time,the trend of highly strained GaInAs/GaAs quantum wells for long wavelength is also considered.Finally,by using the Luttinger-Kohn Hamitonian the valence band dispersion curves and the density of states of the strained quantum wells are studied theoretically.