Er离子在InP、GaAs和Si中的1.54μm特征发光峰

CHARACTERISTIC 1.54μm LUMINESCENCE OF Er^(3+) IONS IN SEMICONDUCTORS InP, GaAs AND Si

分别在InP、GaAs和Si中以7×10^(14)和1×10^(15)cm^(-2)的剂量进行Er离子注入,并采用闭管、快速和炉退火等热处理。低温光致发光(PL)、反射式高能电子衍射(RHEED)和卢瑟福背散射(RBS)实验研究表明,上述样品中Er^(3+)离子特征发光的中心波长均出现在1.54μm处,其中InP的发光峰最强,而注入损伤的恢复是影响Er^(3+)发光的重要因素之一。RBS分析进一步证实退火后Er原子在Si中向表面迁移,而在InP中的外扩散较小,并比较了Er在InP和Si晶格中的占位情况。

Er ions were implanted into semiconductors InP, GaAs and Si with the dosages as high as 7×10^(14) Er/cm^2 at 150keV and 1×10^(15) Er/cm^2 at 350keV, respectively. Three kinds of capless post-annealing were utilized, i. e. rapid thermal annealing (RTA), face-to-face annealing (FFA) and quartz ampoule annealing (APA). The central wavelength of Er^(3+) characteristic emission in InP (Er:), GaAs (Er:) and Si (Er:) was consistently at 1.54μm, which was corresponding to the transition from Er 4f-intershell ~4I_(13/2) to ~4I_(15/2). Among these samples, the strongest 1.54μm emission occurred in InP (Er:) for the same implanting parameters. In this work, the 1.54μm Er emission properties, restorage of the implantation damages Er redistribution and position in lattice site were investigated by 10K photoluminescence (PL), reflection high energy electron diffraction (RHEED) and Rutherford Backscattering (RBS). The Er^(3+) PL intensity as a function of annealing temperature and time showed that restorage of the implantation damage was one of the important factors for Er^(3+) emission. RBS experiments exhibited that Er atoms moved outward to the surface of Si (Er:) by thermal annealing. On the contrary, the movement of Er in annealed InP (Er:) was undetectable within RBS resolution. The effects of Er position in Si (Er:) lattice sites on Er^(3+) emission in comparison with that of InP (Er:) were discussed.