GaAs/AlGaAs多量子阱红外探测器的特性研究

STUDY OF CHARACTERISTICS OF GaAs/AlGaAs MULTIPLE QUANTUM WELL INFRARED DETECTOR

测量了GaAs/AlGaAs多量子阱红外探测器的伏安特性I_b(T_D,V_b)、黑体光响应电压V_S(T_D,T_B,V_b)和噪声电压V_N(T_D,V_b),由此获得器件的黑体电压响应率R_(VB)(T_D,V_b)和探测率D_B~*(T_D,V_b)并用Lorentz光响应线形对V_S(T_D,T_B,V_b)拟合给出器件的光电流谱的峰值波长λ_P和半峰宽λ_w。

The current-voltage characteristics I_b(T_D, V_b), blackbody response voltage V_S(T_D, T_B, V_b) and noise voltage V_N(T_D, V_b) of GaAs/AlGaAs multiple quantum wells infrared detector were measured and the blackbody voltage responsivity R_(VB)(T_D, V_b) and detectivity D_B~*(T_D, V_b) of the detector were obtained. The spectral response peak wavelength λ_P and the full width at half maximum λ_ω of the detector were calculated by fitting the response voltage V_S(T_D, T_B, V_b) with Lorentz response line shape.