Pt/Si界面反应与肖特基势垒形成的研究

STUDY OF THE RELATION BETWEEN INTERFACIAL REACTION AND FORMATION OF SCHOTTKY BARRIERS

利用俄歇电子能谱、二次离子质谱、深能级瞬态谱(DLTS)和C-V法等电学测量方法,详细研究了Pt/Si和Pt硅化物/Si界面的反应性质、原子结构及杂质/缺陷的分布,讨论了它们对肖特基势垒的形成、势垒特性和势垒高度的影响。

Electrical measurements (DLTS and C-V) were combined with surface analysis techniques (AES and SIMS) to study the reactions, atomic structure, the distribution of defect/impurity and the Schottky barrier heights at Pt/Si and Pt-silicides/Si interfaces. The relation between the interracial reaction and the formation of Schottky barriers is discussed in this paper in detail.