摘要
利用电子束曝光机完成有关邻近效应的实验 .曝光过程中加速电压为 5～ 30kV ,衬底基片为铬和PMMA(聚甲基丙烯酸甲酯 ) .在处理模拟电子穿越衬底PMMA的边界时 ,采用了几率确定法 ,用以判断电子是否在界面处发生一次弹性散射 .得到了散射电子在电子束胶层中背散射与前散射的能量沉积分布图 .实际应用表明 ,该方法像差小而可以不用动态校正 .
The proximity effect in the E-beam lithography system was verified by experiments.All exposures have been made with 5～30?kV beam accelerating in PMMA resist and Cr plate. Random probability number is used to determine whether there is an elastic scattering happening between resist and Cr plate in the E-beam lithographing process when the distribution of the scattering electrons' energy deposition in PMMA resist is simulated. The graphs of the forward scattering energy deposition and backscattering energy deposition have been given. The practical applications demoustrate that the aberration of the method is so small that the dynamic correction is unnecessary.
出处
《山东大学学报（工学版）》
CAS
2004年第5期42-45,共4页
Journal of Shandong University（Engineering Science）
基金
国家自然科学基金资助项目 (90 3 0 70 0 3 )
山东省教育厅自然科学基金资助项目 (0 3B5 3 )
关键词
邻近效应
电子束曝光机
畸变
背散射与前散射
proximity effect
E-beam lithography system
distortion
forward scattering and backscattering
