封闭式电子回旋共振等离子体低温沉积SrTiO_3膜

Low temperature preparation of SrTiO_3 films by MCECR sputtering

在室温条件下 ,用封闭式电子回旋共振 (MCECR)等离子体溅射方法沉积了SrTiO3(STO)膜 .用Ar等离子体在Si基片上溅射的STO膜是非晶的 ,然而用Ar/O2 等离子体在Pt/Ti/SiO2 /Si上溅射的是充分结晶的STO膜 .为了使非晶薄膜结晶 ,用电炉加热或 2 8GHz微波辐射对非晶STO膜进行退火处理 .采用微波辐射 ,使基片温度为 5 73K时 ,在Si上的STO膜退火后的介电常数大约为 2 6 0 ,这值近似等于块状STO材料的介电常数 .由于微波辐射能够降低薄膜的退火温度和提高薄膜的电特性 。

SrTiO_3(STO) films were prepared under the condition of room temperature by the mirror_confinement_type electron cyclotron resonance (MCECR) plasma sputtering.STO films deposited on Si substrates by Ar plasma were amorphous,whereas those on Pt/Ti/SiO_2/Si substrates by Ar/O_2 plasma were sufficiently crystallized.Annealing by general heating or 28 GHz microwave irradiation was applied to amorphous STO films on Si substrates to crystallize these films.With microwave annealing,these films were crystallized at lower temperatures than with electric furnace annealing.The dielectric constant of STO films on Si substrates annealed by microwave irradiation at the substrate temperature of 573 K was approximately 260,which was nearly equal to the bulk value of STO.Microwave irradiation to these films is considered to be useful since it can reduce the annealing temperatures and improve the electrical property.