GaAs/AlGaAs多量子阱红外探测器的电极引接损伤研究

STUDY OF ELECTRODE BONDING DAMAGE OF GaAs/AlGaAs MULTIPLE QUANTUM WELL INFRARED DETECTOR

从柱形流变模型出发讨论了压焊引接电极时受压面的压强分布、压力损伤半径和深度以及超声压焊时的损伤,并讨论了GaAs/AlGaAs多量子阱红外探测器的超声压焊的压力损伤和In球熔焊的Au丝力损伤。

The pressure distribution, pressure damage radius and the depth in bonding, and the damage in ultrasonic bonding are discussed with the cylinder flow model. Besides, the ultrasonic bonding damage mechanism and the force damage of Au wire in indium ball melt-bonding technique of GaAs/AlGaAs multiple quantum well detector are also discussed in this article.