离子注入聚醚砜(PES)膜的介电频谱与红外光谱分析

ANALYSIS OF DIELECTRIC FREQUENCY AND IRSPECTRA FOR POLYETHER SULFONE FILM WITH ION IMPLANTION

用１５ｋｅＶＡｒ＋和Ｎ＋注入纯ＰＥＳ膜和掺碘ＰＥＳ膜，掺碘ＰＥＳ样品离子注入后的介电谱表明，随注入剂量的增加，损耗峰移向高频，损耗峰的高度下降。离子注入纯ＰＥＳ膜的介电损耗在（０～１０）ＭＨｚ内小于０．０６２，没有松驰特性，是制作布线的理想材料。红外光谱表明，离子注入引起ＰＥＳ膜结构变化。

ure PES film and iodine doped PES film implanted with 15keV nitroge and argon ions. Dielectric frequency spctra of iodine doped PES film after implanting shows frequency of dielectric loss peak decreases with the increasing of implanted ion dose. Dielectric loss of ion implanted pure PES film is less than 0062 within (0～10)MHz and without relaxation characteristic.Pure PES film is ideal material for making connecting line.Infrared spectra of iodine doped PES film before and after implantation suggest that the structure of implanted PES film have changed .