940nm20%占空比InGaAs/AlGaAs大功率LD线阵

940 nm High Power InGaAs/AlGaAs LD Arrays with Putycycle of 20%

采用金属有机化合物气相淀积(MOCVD)技术,制作了AlGaAs/InGaAs/GaAs大功率20%占空比半导体激光器。采用良好的封装方式,激光器直接封装在高效导热载体上,对载体水冷散热,在脉冲频率500Hz,脉冲宽度400μs下,驱动电流105A时输出功率高达90.6W,最高电 光转换效率42.3%,斜率效率0.94W/A。器件中心激射波长941.8nm,光谱半高全宽3.3nm。

High powr of 20% dutycircle AlGaAs/InGaAs/GaAs laser arrays were prepared by MOCVD method.By direct packaging on the copper heat sink with a special way and by water-cooling effectively,output power of the device is 90.6 W at 105 A and at 20% dutycircle pulse rate of 500 Hz and of pulse width 400 μs.And the slope efficiency is 0.94 W/A,highest e-o efficiency is 42.3%.The laser wavelength is 941.8 nm and FWHM is 3.3 nm.