准一维含铂卤素络合物中的杂质诱导链间耦合

Impurity-Induced Interchain Coupling in Quasi-One-Dimensional Halogen-Bridged Platinum Complex (HMPC)

本文提出了一个描述掺杂的准一维卤素桥接混合价含铂络合物(HMCP)的模型Hamiltonian.认为掺杂诱导的缺陷态是极化子态,利用Green函数方法,数值计算了其结合能与杂质浓度的函数关系.对HMPC中的掺杂机制进行了详细的讨论,成功地解释了掺杂引起的电导率的变化.

Based on the experimental data, a model Hamiltonian which is appropriate to describe doped quasi-one-dimensional halogen-bridged mixed-valence platinum complexes(HMPC's)was presented. Using Geen's function, the binding energy of polaron, which is a defect state by doping-induced, as a function of impurity concentration was calculated numerically. The conductivity mechanism in HMPC was discussed detail, it could explain the change of conductivity caused by doping.