摘要
通过解联立一维泊松方程得到了场限环结构的电场和电位分布.讨论了环间距、环宽、N-掺杂浓度、结深和表面电荷密度等参数的影响,得出了归一化击穿电压和环间距计算值.用这些计算值可以推算多环间结构的击穿电压和作为场限环设计的依据.
By solving two coupled one-dimensional poisson equations,the field and potential distributions between, rings are obtained-The influence of the device parameters such as ring spacing ring width, N-doping concentration,junction depth and surface charge densety is discussed. The calculations of formatized distance between rings and formatized breakdown voltages are presented. By using the calculations, the breakdown voltages in two or more rings structure may be predicted.
出处
《湖南大学学报(自然科学版)》
EI
CAS
CSCD
1993年第3期64-67,共4页
Journal of Hunan University:Natural Sciences