摘要
介绍了激光直写技术制作二元光学元件铬版掩模的原理,分析了影响铬版上铬膜氧化程度的因素,研究了铬版上 刻写掩模图案时激光能量与刻写半径之间的关系,总结了利用激光直写方法刻写二元光学元件铬版掩模过程中激光能量的 形成方法。
The theory of Binary mask fabrication by laser direct writing is described in the paper. The relation between the laser power and writing radius is studied in the paper. The paper also analyses the factors that affect the Cr film exposure, summarizes a way for getting the laser power automatically during writing process.
出处
《应用激光》
CSCD
北大核心
2004年第4期213-216,共4页
Applied Laser