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纳米晶存储特性的研究

Research on the Memory Characteristics of Nanocrystals
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摘要 常温下硅纳米晶构成的 MOSFET 存储器具有低压、低功耗、体积小、高剂量和快速读写等优良特性,在 ULSI 中有重要的应用前景。它是当前 ULSI 研究中的一项热门专题,在国外一些著名刊物上屡见报道。本文介绍了这种器件的存储特性及其机理与最新研究进展。 The floating-dot MOSFET memory based on Si nanocrystals is reported frequently, because it has many advantages such as low power consumption, high writing endurance, and small device size. This device is a promising candidate for future nonvolatile memories. In this paper, some main factors, which influence the memory characteristics of the MOS structures containing Si nanocrystals, are analyzed, the latest research progress in the subject is introduced.
作者 唐文洁 刘之景 陶进绪 刘磁辉
机构地区 中国科学技术大学近代物理系 中国科学技术大学电子工程与信息科学系 中国科学技术大学物理系
出处 《半导体技术》 CAS CSCD 北大核心 2004年第10期15-19,共5页 Semiconductor Technology
基金 国家自然科学基金资助项目(60377004)
关键词 ULSI MOSFET 体积小 低功耗 器件 纳米晶 存储器 存储特性 读写 快速 nanocrystal MOS memorizer memory characteristics
分类号 TN405 [电子电信—微电子学与固体电子学] TP311.1 [自动化与计算机技术—计算机软件与理论]
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参考文献12

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半导体技术
2004年 第10期

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