摘要
近年来,随着SOI技术的快速发展,SOI集成电路的ESD保护已成为一个主要的可靠性设计问题。介绍了SOIESD保护器件方面的最新进展,阐述了在SOIESD保护器件设计和优化中出现的新问题,并进行了详细的讨论。
With the rapid development of SOI technology in recent years, electrostatic discharge(ESD)has became a major concern for reliability of SOI integrated circuits. The development of novel SOI ESD protection devices is presented in the paper. Issues often overlooked in the design and optimization of SOI ESD protection devices are discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2004年第5期497-500,513,共5页
Microelectronics
关键词
静电保护
SOI
集成电路
可靠性
ESD protection
Silicon-on-insulator
Integrated circuit
Reliability
