摘要
本文介绍并讨论一种新型的光—电子器件—不对称的法布里—泊洛GaAs/GaAlAs多重量子阱光反射调制器.其工作原理是基于法布里—泊洛空腔的特性及量子阱中的QCSE效应,其工作状态有“常接通”和“常断开”两种模式.此外还介绍了在Si衬底上生长的此类器件的新进展.
The optoelectronic devices, asymmetric Fabry-Perot GaAs/GaAlAs multiple quantum well optical reflection modulators (AFPM) ,are introduced and discussed. The operating mechanism of the devices is based on the asymmetric Fabry-Perot cavity and the Quantum Confined Stark Effect associated with quantum well structures. AFPM can be designed to operate in two modes: Normally-on and Normally-off. The new development of AFPM grown on silicon substrate is discussed as well.
出处
《华东船舶工业学院学报》
1993年第3期22-22,共1页
Journal of East China Shipbuilding Institute(Natural Science Edition)
关键词
超晶格半导体
斯塔克效应
限制态
superlattice semiconductors
Stark effect
confined state