摘要
用TEA CO_2激光诱导四甲基硅烷(TMS)的气相反应,生成了纯而均匀的SiC超细粉末,粒径小于0.2μm。把反应物置于均匀外电场中,可以使引发化学反应时所需的激光功率密度阀值降低一倍。TMS气压可达到40kPa。讨论了气体分压比对反应速度、产率与产物成分的影响。
Pure and homogeneous SiC ultrafine powders were synthesized from tetramethyl silicane (TMS) through the vapor phase reaction induced by TEA CO_2 laser. The particle size is less than 0.2μm. Putting the reactants in uniform electric field, we reduced the laser power density threshold needed by said reaction by a factor of two. The vapor pressure of TMS reached 40kPa. The effects of gas pressure on reaction rate, yield, and product composition were discussed.
关键词
电场
碳化硅
陶瓷粉末
激光诱导
ultrafine powder
laser
electric field
silicon carbide
tetramethyl silicane
