摘要
新出现的直接跃迁GaInNAs与具有高反射率的AlAs/GaAs分布布拉格反射镜相结合构成了GaAs基长波长(1.3~1.6μm)垂直腔面发射激光器(VCSEL),将成为光纤通信、光互联和光信息处理等的关键元件。本文从材料的选取、外延技术和GaInNAs VCSEL国外和国内的发展状况等方面对长波长GaInNAs VCSEL进行了综合阐述。
The combination of a novel direct-transition GaInNAs and AlAs/GaAs distributed Bragg reflector with high reflectivity are making up of a GaAs-based long wavelength (1.3~1.6μm) vertical-cavity surface-emitting laser, and the device are becoming the essential element in optical communication, network, and data treatment. We reviewed the long wavelength GaIn-NAs vertical-cavity surface-emitting laser from selection of material, epitaxial technology, and overseas and domestic development of GaInNAs vertical-cavity surface-emitting laser.
出处
《量子电子学报》
CAS
CSCD
北大核心
2004年第5期565-570,共6页
Chinese Journal of Quantum Electronics
基金
国家自然科学基金(10104016
60306004)
中科院长春光机物理所知识创新项目