界面效应对半导体量子点异质结的电子能级扰动的分析

Interface effects on energy levels in semiconductor quantum dot heterostructures

提出采用壳状结构和渐变有限深势阱模型的方法来分析界面效应对半导体量子点异质结的束缚态电子能级的扰动。模拟计算表明,对于处于强受限的量子点,界面效应明显。随着量子点的表面区域增大和量子点尺寸的减小,能级移动增加,在低能级时近似呈线性变化关系。

Based on a spherical shell structure and the graded finite potential well model, the interface effects on the energy level shifts of bound states in a semiconductor quantum dot heterostructure were analyzed and calculated. It indicates that the interface effects are fairly significant when the quantum dots are in the strong confinement region.