双光子吸收和激发态吸收的理论模拟
出处
《量子电子学报》
CAS
CSCD
北大核心
2004年第5期700-700,共1页
Chinese Journal of Quantum Electronics
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1李素梅,郑卫民,宋迎新,刘静,初宁宁.Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells[J].Chinese Physics B,2009,18(9):3975-3979.
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2谭芳,于凤霞,WANG Lili,WANG Lingfei.Enhancement in Laser Performance of Er^(3+)/Yb^(3+) Co-doped Phosphate Glass Materials[J].Journal of Wuhan University of Technology(Materials Science),2015,30(3):442-446.
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3LIYun-Bai HOUYan-Bing TENGFeng XUXu-Rong.Electric Field-Induced Quenching of Photoluminescence from Ir(PPY)3-Doped PVK[J].Chinese Physics Letters,2004,21(7):1362-1365.
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4激光物理[J].中国光学,1995(6):13-15.
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5刘春玲,掌蕴东,单宏琳,查子忠,王骐.类立方烷过渡金属簇合物(n-Bu_4N)_3[MoAg_3BrI_3S_4]激发态寿命测量(英文)[J].光子学报,1999,28(3):234-237.
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6尉吉勇,黄柏标,于永芹,张琦,姚书山,张晓阳,秦晓燕.InGaAlP/InGaP多量子阱中的红外向可见光的上转换[J].人工晶体学报,2005,34(4):585-588.
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7张丽英,鲁俊超,樊志琴,吕刚,王建星,刘秀英.树枝状铱配合物的合成与发光性能研究[J].化工新型材料,2014,42(8):121-123.
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8吴涛,孙迭篪,李富铭,邓佩珍,徐军.Cr^(4+): YAG、Cr^(4+): Mg_2SiO_4近红外荧光辐射温度特性研究[J].光学学报,1997,17(7):866-869.
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9宋迎新,郑卫民,刘静,初宁宁,李素梅.量子限制效应对δ掺杂GaAs/AlAs多量子阱中铍受主态寿命的影响[J].物理学报,2009,58(9):6471-6476.
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10雷红兵,杨沁清,欧海燕,余金中,王启明.掺铒硅光致发光激子传递能量机制[J].Journal of Semiconductors,2000,21(3):232-238. 被引量:3
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