高功率底发射VCSELs的制作与特性研究

Fabrication and experimental characterization of high power bottom-emitting VCSELs

研究制作了大面积底发射氧化限制面发射激光器,并分析了器件特性。通过增加有源区面积,改进制作工艺,采用Al2O3作钝化膜和多层复合HfO2作增透膜等方法,提高了激光器输出功率。分析了最大输出功率与有源区直径和注入电流之间的依赖关系。结果表明:有源区直径分别为500μm和600μm的单管,室温下均达到连续输出功率1.95W,这也是目前国际上所实现的单管室温连续输出最高功率;实验所得最大输出功率与有源区直径和注入电流之间的依赖关系与理论计算所得结果一致。并特别讨论了直径200μm的器件的近场和远场光强分布,获得单横模工作。

High power bottom emitting vertical-cavity surface-emitting lasers(VCSELs) emitting at 980 nm was fabricated and characterized. Through enlarging the active diameter, improving the fabrication technology and using Al2O3 and HfO2 as passivation layer and antireflection coating respectively, the output power was greatly increased. The dependence of maximum output power on device diameter and injected current was investigated, which is in good agreement with theoretical simulation. A continuous-wave (CW) output power as high as 1.95 W for devices with diameters of 500 μm and 600 μm has been achieved, which is the highest value reported for a single device. The detailed analysis of the nearfield and farfield images of a 200 μm diameter device exhibits a homogeneous current distribution and a single transverse mode operation.