摘要
用电沉积法在低碳钢基体上制备了具有不同调制波长(一个调制波长等于单层Cu膜与单层Ni膜厚度之和)的Cu/Ni金属多层膜,研究了多层膜硬度与其中单层膜厚度之间的关系。结果表明,当膜厚在亚微米范围内时,Cu/Ni多层膜的屈服强度(为硬度值的1/3)与单层膜厚之间符合基于位错塞积模型的Hall-Petch(H-P)关系式;而当单层膜厚小于100nm时,屈服强度与膜厚的关系偏离了H-P线性关系。基于程开甲等人位错稳定性理论首次对金属多层膜变形行为偏离Hall-Petch关系的现象作了定量解释。
Cu/Ni multilayers with various modulation wavelengths were deposited on a low carbon steel substrates by electrode positing method. Hardness measurements identified that the relationship between the yield strength (one-third of hardness) which increased with decrease of layer thickness for Cu/Ni multilayers and single layer thickness at sub-micron length scale--could be described by the Hall-Petch (H-P) formula for dislocation pile-up. In the regime of few tens to a hundred nanometer of single layer thickness, the dislocation pileup-based H-P model breaks down. This can be explained in terms of the limiting dislocation size criterion proposed by Cheng et al.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2004年第9期933-936,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金项目(59831040)
河南省自然科学基金项目(0411050100)
河南科技大学科研基金项目(2003ZY40)