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钴镍与多晶锗硅的固相反应和肖特基接触特性 被引量：2

Solid-Phase Reaction Between Co, Ni/n-poly-Si_(0.84)Ge_(0.16) and Schottky Barrier Properties of the Formed Contacts
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摘要 采用离子束溅射淀积非晶锗硅薄膜,通过热扩散进行磷掺杂,制备弱n型的多晶锗硅薄膜.用X射线衍射表征了在快速热退火条件下,钴和镍与多晶锗硅的固相反应.利用室温I-V法研究了钴镍与多晶锗硅的接触特性,发现能形成比较理想的肖特基接触.拟合I-V曲线得到接触参数,两样品的表观势垒高度都在0.56～0.59ev之间.实验结果表明,300～600℃退火对肖特基势垒高度没有显著影响. Amorphous Si0.86Ge0.14 thin film was deposited by ion beam sputtering (IBS)technique. It was doped with phosphorus through thermal diffusion to fabricate n-poly-Si0.84Ge0.16layer. Co and Ni were deposited respectively on n-poly-Si0.84Ge0.16 layer by IBS method to investi-gate solid-phase reaction between Co, Ni and n-poly-Si0.84Ge0.16, as well as their Schottky contactproperties. The I-V characteristics of both as-deposited and annealed Schottky junctions weremeasured at room temperature. The results indicate that the Schottky barrier heights (SBHs) keepnearly constant with the annealing temperature between 300 and 600 ℃.
作者 王光伟 茹国平 屈新萍 李炳宗
机构地区 复旦大学微电子学系
出处 《半导体技术》 CAS CSCD 北大核心 2004年第11期36-40,共5页 Semiconductor Technology
基金 国家自然科学基金(NSFC-60106002 NSFC-60206002) 上海-应用材料研究与发展基金项目(0213)。
关键词 离子束溅射 多晶锗硅 热扩散 固相反应 肖特基接触特性 ion-beam-sputtering deposition poly-Si1-xGex thermal diffusion solid-phasereaction Schottky contact properties
分类号 TN386 [电子电信—物理电子学]
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参考文献33

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同被引文献55

  • 1段鹏,屈新萍,刘萍,徐展宏,茹国平,李炳宗.Ni诱导非晶SiGe薄膜结晶[J].Journal of Semiconductors,2004,25(11):1453-1457. 被引量：3
  • 2Zhang J J, Shimizu K, Hanna J. High mobility top-gate thin film transistors fabricated with poly-Si1-x Gex thin films on glass substrate. J Non-Cryst Solids, 2004,338: 740
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  • 7King T J,Saraswat K C, Pfiester J R. PMOS transistors in LPCVD polycrystalline silicon-germanium films. IEEE Electron Device Lett,1991,12(11) :584
  • 8King T J,Saraswat K C. A low-temperature (≤500℃) silicon-germanium MOS thin-film transistor technology for large-area electronics. Tech Dig Int Electron Devices Meet,1991:567
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半导体技术
2004年 第11期

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