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非制冷红外热成像技术的发展与现状 被引量:88

Recent development and status of uncooled IR thermalimaging technology
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摘要 非制冷红外焦平面技术在过去的几年内飞速发展,非制冷焦平面由原来的小规模,发展到中、大规模320×240和640×480阵列,在未来的几年内有望获得超大规模的1024×1024非制冷焦平面阵列。像素尺寸也由50μm减小到25μm,提高了焦平面的灵敏度,使非制冷红外热成像系统在军事领域得到了成功应用,部分型号已经装备于部队,并受到好评。今后,随着焦平面阵列规模的不断增大、像素尺寸的进一步减小,非制冷热成像系统在军事领域的应用将越来越广泛,尤其在轻武器瞄具、驾驶员视力增强器、手持式便携热像仪等轻武器方面,非制冷热成像系统在近年内有望逐步取代价格高、可靠性差、体积大等笨重的制冷型热成像系统。 From small scale to medium and large scale 320×240, 640×480 uncooled focal plane array (UFPA), uncooled infrared technology has been developed rapidly in recent years, and 1024×1024 FPAs are expected in the future. The pixel pitch is also developed from 50-25 μm, and the sensitivity is improved largely, so that the thermal imaging system is applied successfully in military affairs. Part model has been armed in military and measured well. In the future, with the developing larger scale and smaller pixel of UFPA, the application of uncooled thermal imaging system will be wider, especially in light thermal weapon, such as light weapon vision, driver vision enhancer and handle thermal system, uncooled thermal imaging system is expected to replace the high price, low reliability, big bulk cooled thermal imaging system gradually in recent years.
出处 《红外与激光工程》 EI CSCD 北大核心 2004年第5期441-444,共4页 Infrared and Laser Engineering
关键词 非制冷焦平面 红外热成像系统 红外焦平面 红外热成像技术 焦平面阵列 热像仪 型号 军事领域 大规模 像素尺寸 Cooling Imaging systems Mathematical models Military applications Reliability Sensitivity analysis
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参考文献7

  • 1Hanson Charles M, Beratan Howard R, Belcher James F, et al. Advances in monolithic ferroelectric uncooled IRFPA technology[A]. SPIE[C].1998,3379.60-68.
  • 2Hanson Charles M, Beratan Howard R. Thin film ferroelectrics:breakthrough[A]. SPIE[C]. 2002,4721.91-98.
  • 3Murphy R, Kohin M, Backer B, et al. Recent developments in uncooled IR technology[A]. SPIE[C]. 2000,4028.12-16.
  • 4Philip E Howard, John E Clarke, Adrian C Ionescu. DRS U6000 640×480 VOx uncooled IR focal plane[A]. SPIE[C].2002,4721.48-55.
  • 5Murphy D,Ray M, Wyles R, et al.High sensitivety (25 μm pitch) microbolometer FPAs[A]. SPIE[C]. 2001,4454.147-159.
  • 6Eric MOTTIN, Jean-Luc MARTIN, Jean-Louis OUVRIER-BUFFET, et al. Enhanced amorphous silicon technology for 320×240 microbolometer arrays with a pitch of 35 μm[A]. SPIE[C]. 2001,4369.250-256.
  • 7Mottin E, Astrid Bain, Jean-Luc Martin, et al. Uncooled amorphous silicon technology enhancement for 25 μm pixel pitch achievement[A].SPIE[C].2002,4820.200-207.

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