摘要
针对Mo-Cu-Ni新型电子封装材料的生产工艺及主要性能进行了初步的研究和探讨,通过对不同烧结温度下合金密度、电阻率和显微组织的测试和观察,获得了采用粉末冶金法制备Mo-Cu-Ni合金的最佳烧结温度。研究结果表明:采用液相烧结方法制取Mo-Cu-Ni合金时,最佳烧结温度为1200℃,此时的合金致密化最好,热轧后的相对密度可达98.2%,且电阻率最低。
Process and physical property of Mo-Cu-Ni electronic packing material was studied and discussed. By testing density and resistivity and observing microstructure of the alloy at difference sintering temperature, the optimum sintering temperature of making Mo-Cu-Ni alloy was obtained. It shows that,Mo-Cu-Ni alloy's optimum sintering temperature is 1 200 ℃ by liquid sintering processing, density is maximum, and the relative density reaches 98.2%. Resistivity of the alloy is lowest.
出处
《中国钼业》
2004年第5期32-34,共3页
China Molybdenum Industry