红外反射法研究6H-SiC表面热氧化生长的SiO_2特性

Infrared Reflectance Spectroscopy Study of the SiO_2 Film byThermal Oxidation on 6H-SiC

本文利用红外反射峰位置与薄膜厚度及密度的关系研究了在SiC衬底上热氧化生长出的SiO2在退火前及在不同温度用高N2退火一小时后的1085cm-1附近红外反射峰的漂移情况,分析了SiO2的密度变化。密度的变化反映了退火中SiO2中的C和CO的扩散以及空位型缺陷的退火过程。

Based on the fact that the position of infrared reflectance peak is related to the thickness and the density of the film,infrared reflectance spectra of SiO_2 film thermally grown on SiC wafers at 1150℃ and annealed in 1h in different temperature in the atmosphere of N_2,have been obtained.we studied the excursion of the peak around 1085cm^(-1) which can be used to monitor the density of the SiO_2 film,The change of density showed the procedure of the diffusion of C and CO in SiO_2 film while annealing.