薄发射区晶闸管结构及特性的研究

On the Structure and Characteristics of Thyristors with a Thin Emitting Region

在晶闸管的pin二极管模型基础上,提出了薄发射区晶闸管新结构.分析了P发射区杂质总量Q_E对晶闸管通态压降V_T的影响,导出了Q_E与V_T的关系式.分析计算表明,对一确定的宽度W_B和厚度W_P,在某一Q_E下有V_T极小值点存在;当W_P小于等于0.1μm时,随着Q_E的减小,V_T单调下降并趋于一几乎不变的值;当Q_E大于某一值时,V_T与W_P无关,而是随基区宽度及发射层杂质总量的增加而增加.实验结果还表明,用LPCVD原位掺杂制作的薄发射区晶闸管芯片样品,与普通晶闸管相比,有较好的速度特性.

This paper presents a new structure of thyristors with a thin emitting region based on the pin diode model for thyristors. The effect of total doping amount QE of emitting region P on on-state voltage drop VT is discussed and the expression for the relationship between QE and VT is derived. Analysis and computation show that when the thickness Wp of the emitting region is extremely thin, VT decreases monotonically and approaches an almost constant value with a decrease of QE. When QE becomes larger than a certain value, VT will increase with an increase of base region width WB and QE but is independent of thickness Wp of emitting region. It is also shown that, according to experimental results, the chip sample of thyristors with a thin emitting region made by LPCVD doping in situ has better speed characteristics than that of ordinary ones.