p型CuSCN半导体薄膜电沉积特征的研究

CHARACTERISTICS OF pCuSCN THIN FILMS PREPARED BY ELECTROCHEMICAL DEPOSITION

采用电化学沉积法分别用水和乙醇作溶剂在In2O3SnO2(ITO)透明导电玻璃上制备出了CuSCN薄膜。通过XPS分析表明:2种溶剂中制备的CuSCN薄膜均为SCN化学剂量比过量,具有p型半导体特征。研究了溶剂对CuSCN薄膜结构和光电学特性的影响。结果表明:在乙醇溶剂中能够制备出晶粒更加细化,致密度较高的CuSCN薄膜,电化学沉积制备的CuSCN薄膜具有βCuSCN结构,属于六方晶系,直接光学带隙为3.7eV,具有较高的透光率。电流时间或电位时间的变化曲线表明:利用薄膜的半导体电阻特性,可以影响薄膜的沉积行为。

p-CuSCN thin films were prepared on In2O3-SnO2 (ITO) glass substrate by electrochemical deposition in aqueous or ethanol solution respectively. The XPS analysis indicates that the stoichiometric excess of CSN in both solutions shows that the CuSCN thin film deposited on ITO glass is p-type semiconductor. The influence of the solvents on structural and optical properties of the films was studied. The results illuminate that CuSCN films with higher density and smaller crystal size can be obtained from ethanol solution. The as-deposited films are polycrystalline β-CuSCN with hexagonal lattice, and the direct optical band gap is 3.7 eV. Variation of current and voltaic with time during electrochemical deposition reveals that the deposition behavior of p-CuSCN thin films can be affected by the semiconductive electrical resistance property of CuSCN film.