摘要
基于气溶胶动力学和化学反应动力学,建立了化学气相淀积(CVD)反应器中普适动力学方程,导出了CVD反应器中超细颗粒粒径分布谱函数和薄膜淀积速率的计算方法;研究了操作参数对钛酸丁酯高温裂解过程中成核与成膜的影响.用成核与成膜竞争判据——H准数,研究了CVD反应器中成核与成膜的控制策略.
A generalzed dynamic equation based on aerosol dynamics and reaction kinetics for a CVD reactor was derived, and a calculation method for particle size distribution and film growth rate in the CVD reactor was developed. The effects of operation parameters on particle formation and film growth process were simulated with this method. By means of a dimensionless parameter H, the optimal condition for particle formation and film growth in the CVD reactor could be determined quantatively.
出处
《化工学报》
EI
CAS
CSCD
北大核心
1993年第5期523-530,共8页
CIESC Journal
基金
国家自然科学基金资助项目
关键词
气相淀积
粒度
薄膜
反应器
气溶胶
chemical vapor deposition, particle size distribution, film growth