期刊文献+

一维硅纳米材料的研究进展 被引量:3

Advancing in Research of One-dimensional Silicon Nano-materials
下载PDF
导出
摘要 作为微电子领域最重要的半导体材料,硅的一维纳米结构在器件组装、纳米尺寸磁性器件、光电子等领域具有重要的作用,已经成为国际上材料科学研究的一个热点。从制备方法、应用前景等方面综述了国际上关于纳米硅丝和纳米硅管的研究进展,并提出今后的研究方向。 As silicon is the most important semiconductor material in micro-electronic field,one-dimensional nano-structures of silicon play an important role in the fields of device assembly,nanometer-size magnetic device,photoelectronics,and have drawn wide interest in the world. Recent progress in the research on silicon nanowires and silicon nanotubes is reviewed,and the research will be done is suggested.
出处 《材料导报》 EI CAS CSCD 2004年第9期72-75,共4页 Materials Reports
基金 国家自然科学重点项目(批准号:50032010) 浙江省自然科学基金(浙江省2001批准号:601092) 中国博士后科学基金(批准号:2002031240)
关键词 微电子 纳米硅 光电子 半导体材料 磁性器件 组装 纳米结构 研究进展 国际 综述 silicon nanowires silicon nanotubes semiconductor material
  • 相关文献

参考文献36

  • 1[1]Iijima S. Helical microtublules of graphitic carbon. Nature,1991,354:56
  • 2[2]Yu D P ,Hang Q L ,Ding Y ,et al. Applied silica nanowires:Intensive blue light emitters. Appl Phys Lett, 1998,73:3076
  • 3[3]Morales A M,Lieber C M.A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science,1998,279:208
  • 4[4]Duan X ,Hu X,Lieber C M. General synthesis of compound semiconductor nanowires. Adv Mater, 2000,12: 298
  • 5[5]Pan Zhengwei, Lar HauLing, Frederick C K Au ,et al. Oriented silicon carbide nanowires :Synthesis and field emission properties. Adv Mater, 2000,12: 1186
  • 6[6]Duan X,Lieber C M. Laser-assisted catalytic growth single crystal GaN nanowires. J Amer Chem Soc, 2000,122:188
  • 7[7]Duan X,Wang J,Lieber C M. Synthesis and optical properties of gallium arsenide nanowires. Appl Phys Lett, 2000,76:1116
  • 8[8]Smith P A. Electric-field assisted assembly and alignment of metallic nanowires. Appl Phys Lett, 2000,77:1399
  • 9[9]Abhishek Kumar Singh,Tina M Briere,Vijay Kumar,et al.Magnetism in transition-metal-doped silicon nanotubes.Phys Rev Lett, 2003,91: 146802
  • 10[10]Yasuo Wada, Tokuo Kure, Toshiyuki Yoshimura, et al.Polycrystalline silicon"slitnanowire" for possible quantum devices. J Vacuum Sci & Techn B,1994,12:48

同被引文献67

引证文献3

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部