长链对称取代卟啉锰L-B膜的结构及其MIM、MIS结构的Ⅰ-Ⅴ特性研究

The Preparation and Structure of L-B Films of Mn(Ⅲ)TPP(COOH) and the Ⅰ-Ⅴ Characterization for MIM MIS Devices Fabricated from the L-B Films

本文报导了长链对称取代Mn(Ⅲ)TPP(COOH)L-B膜的制备和结构特点,应用紫外可见光谱和小角度X射线衍射表征了膜的纵向均匀性和层状有序的周期性结构,将其与正十六烷混合会显著改善膜的质量,研究了以L-B膜组建的MIM、MIS的结构的I-V特性,结果表明其纵向电阻率与硬脂酸具有相同的数量级,共轭卟啉环的存在没有影响膜的绝缘性,仍可承受10~7V/m的高电场。

This paper reported the preparation and structural characteristics of L-B films of Mn(Ⅲ)TPP(COOH) in which four long hydrocarbon chains were symmetrically attached to the phenyl rings. A fairly good deposition was taken on hydrophobic glass, quartz and solicon slids, UV-Vis absoprtion spectra of L-B films of different layers were measured. The intensity of Soret band of porphy nn molecules was linear increased with layers. This indicated that the uniformity of L-B films in vertical is good. The results of X-rays diffraction of L-B films of Mn(Ⅲ)TPP(COOH) showed that it have periodic structure and the quality of the L-B films could be improved by mixting Mn(Ⅲ)TPP (COOH) with n-cetane. A1/L-B films/A1 and A1/L-B films / Si devices (ie MIM MIS) was fabricated. The I-Vcharacteristic curves of MIM and MIS devices were measured. The electrical resistance of L-B films was 10^(12)-10^(13)Ω cm normal to the substrates with the same magnitued order as stearic acid layers. This confirmed the conductivity of the L-B films in vertical was independent of the occuring of the porphyrin rings, It is still a insulating films and can offers electric fields greater than the 10~7V/m.