镍、铅、LB膜对n-Si光电极的修饰

The Modification of Ni, Pb and LB Films on the Behavior of n-Si Photoelectrode

本文研究了金属(镍、铅)与Langmuir-Blodgett膜对n-Si电极光电化学行为的影响,观察到镍与铅能增强该电极的能量转换效率与稳定性,测定和讨论了八种有机物制得的LB膜对n-Si/Ni电极的修饰作用,最佳的长链香豆素LB膜使其效率倍增,还研究了具有MIS器件结构的Si/LB/Al电极的光电化学行为,发现它具有良好的光电效应。

The effects of metal (Ni or Pb) and Langmuir-Blodgett films on the PEO behavior of n-Si have been studied.It is observed that Ni and Pb can improve the energy conversion efficiency and the stability of n-Si.The modification of LB films prepared with eight different organic compounds on n-Si/Ni have been determined and discussed, its efficiency has been doubled by the best one (long-chain coumarin LB film).The photoelectrochemical properties of Si/LB/Al electrode having the MIS structure has also been researched.It is discovered that it exhibits good photoeleotric effect.