PCVD法制备ZrO_2和YSZ薄膜

ZrO_2 and YSZ Thin Films Synthesized by Microwave Plasma CVD Process

以金属β-二酮类有机螯合物Zr(DPM)_4和Y(DPM)_3为挥发性源物质,采用微波等离子体化学气相淀积法于较低的温度下(420～560℃)成功地在多孔α-Al_2O_3陶瓷、非晶玻璃等衬底上制备出致密的ZrO_2和YSZ薄膜材料。XRD分析结果表明,纯ZrO_2薄膜中除了单斜相外还存在着亚稳态的四方相。当掺入的Y_2O_3摩尔百分含量大于或等于7％时,ZrO_2完全被稳定成立方相。SEM观察表明,在等离子体内的不同区域中生成的薄膜形貌有所不同。XPS检测了YSZ薄膜中Zr3d_(5/2)和Zr3d_(3/2)的电子结合能,发现较ZrO_2的标准值低0.7eV。由TEM观察和由XRD衍射蜂半宽度计算,所制备的ZrO_2和YSZ薄膜中微晶粒径在10nm左右。

Zirconia and yttria-stabilized zirconia (YSZ) thin films were successfully synthesized on a variety of substrates by microwave plasma OVD process, Using betadiketone chelates as votatile sources. The ZrO_2 films we got contain monoclinic and teragonal phases. In YSZ films, when Y_2O_3 content was less than 7 mole percent, two, phases were observed, namely cubic and monoclinic zirconia. When the content bigger than 7 mole percent, the film only has a cubic phase. TEM observation and XRD analysis, the ZrO_2 and YSZ films consist of nanoscale crystallites, which size is about 10nm. XPS analysis revealed that the Zr3d_(5/2) and Zr3d_(3/2) binding energies were lower than the standard values.