接触式串联射频MEMS开关的工艺研究

Technological Study of Fabrication of RF MEMS in Series

本文采用MEMS工艺制作接触式串联射频开关 ,射频开关采用双端固定的悬臂梁结构 ,悬梁为PECVD制作的SiN薄膜 ,溅射Au制作共平面波导 ,聚酰亚胺作为牺牲层 ,运用等离子体刻蚀法释放牺牲层。研究了悬梁、共平面波导以及电极的制作工艺 ,并分析了牺牲层的制作和刻蚀工艺对开关结构的影响。

Fabrication technology of RF MEMS in series was studied.The fixed-fixed beam structure were used in the switches,which consist of SiN suspending membranes grown by plasma enhanced chemical vapor deposition(PECVD),co-planar wave-guide coated with gold film,and a polyimide sacrificial layer released by O 2 plasma etching.The fabrication of SiN membrane,the electrodes and the coplanar wave-guide were discussed,respectively.And how the growth of the sacrificial layer and the chemical etching affect the performance of switches was also discussed.