摘要
研制了一台永磁ECR等离子体化学气相沉积系统。通过同轴开口电介质空腔产生表面波 ,利用高磁能积Nd Fe B磁钢块的合理分布形成高强磁场 ,通过共振磁场区域内的电子回旋共振效应产生大面积均匀的高密度等离子体。进行了ECR等离子体化学气相沉积氧化硅和氮化硅薄膜工艺的研究。6英寸片内膜厚均匀性优于 95 % ,沉积速率高于 10 0nm/min ,FTIR光谱分析表明薄膜中H含量很低。
Nd-Fe-B permanent magnets were installed in our newly developed electron-cyclotron-resonance chemical-vapor-deposition(ECR-CVD) system.The strengths of the new ECR-CVD system include computer control,strong magnetic field distribution over a fairly large space,generation of uniform,high-density plasma and its capability of growing high quality thin films at low temperatures.The system has been successfully used in low temperature growth of SiN and SiO 2 films on silicon wafers,6 inches in diameter,in industrial integrated circuits production.The thickness uniformity of both silicon dioxide and nitrides is better than 95% and the deposition rate can be higher than 100 nm/min.Fourier transform infrared analysis of the films shows that hydrogen content in the films is too low to be detected.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2004年第4期317-320,共4页
Chinese Journal of Vacuum Science and Technology