摘要
系统阐述了基于电子激励解吸附原理的二次电子崩假说的核心论点,即绝缘体表层气体解吸附是导致闪络发生的关键,分析了假说中的阴极三结合点场致电子发射、二次电子崩产生、二次电子发射系数δ、绝缘体表面电荷、绝缘体表面气体解吸附等因素在闪络过程中的作用。
The core idea of mechanism of secondary electron emission avalanche that desorption of adsorbed surface gas is the key process leading to the surface flashover, is analyzed. The main factors, that is, emission of electrons from the cathode triple junction (the interface where the insulator, cathode and vacuum are combined), secondary electron emission avalanche, secondary emission yield δ, insulator surface charge, electron-stimulated desorption efficiency, are expatiated.
出处
《高压电器》
CAS
CSCD
北大核心
2004年第5期366-369,共4页
High Voltage Apparatus
基金
国家863计划资助项目
国家自然科学基金资助项目(50207011)
