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SnO_2掺杂对SrTiO_3环形压敏电阻性能的影响 被引量:4

Effect of SnO_2 Dosing on Performance of SrTiO_3 Doughnut-shaped Varistor
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摘要 笔者介绍了SnO2掺杂对SrTiO3环形压敏电阻性能的影响。电性能测试结果表明,掺杂SnO2的摩尔分数X(SnO2)在0.5%~1.0%的范围内,随掺杂SnO2摩尔分数的增加,试样的压敏电压从8.0V下降到4.0V,电容量从68nF增大到112nF,非线性系数α和介质损耗tanδ基本保持不变。试样的焊接变化率和高低温及温度循环试验特性均满足技术要求,但温度系数偏大。 The effect of SnO_2 dosing on performance of SrTiO\-3 doughnut-shaped varistor is presented.The electrical performance measurement shows that with increase of SnO_2 dosing amount from 0.5%~1.0% of X(SnO_2)mole per cent the voltage is reduced from 8.0V to 4.0V ,the capacitance being increased from 60nF to 112nF and dielectric loss tanδ remained constant.Test samples can meet technical requirements in respect of parameter variation at soldering,at both high and low temperature and at temperature cycle test,but with an enhance temperature coefficient.
出处 《电瓷避雷器》 CAS 北大核心 2004年第4期39-42,46,共5页 Insulators and Surge Arresters
关键词 SRTIO3 压敏电阻 掺杂 介质损耗 环形 TANΔ 电容量 SnO2 非线性系数 压敏电压 SrTiO_3 doughnut-shaped varistor SnO_2 dosing temperature coefficient
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参考文献2

  • 1Li Jianying,Li Shengtao,Liu Fuyi,et al.The oringin of varistor property of SrTiO3-based ceramics[J].Mat Sci.2003(14):483-486.
  • 2李建英.SrTiO3压敏电阻器的温度特性[C]..全国压敏学术会议[C].张家界,1998..

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