草酸铜掺杂DMcT/PAn复合材料电化学性能

Electrochemical properties of DMcT/PAn composite doped CuC_2O_4

掺杂草酸铜之后,DMcT/PAn复合材料的氧化还原峰电位差和电化学阻抗大大减少,氧化还原峰电流增加,首次放电(40mA/g)比容量由186mAh/g增加到298mAh/g,经50次循环后,容量衰减率由68 8%减少到37 3%。研究结果表明:掺杂草酸铜加快了DMcT/PAn复合材料的氧化还原反应,提高了复合材料的放电比容量,改善了循环性能。

After doping CuC_2O_4 into DMcT/PAn composite, the difference between the anodic and cathodic peak potential and the charge-transfer resistance of DMcT/PAn decreased, the redox peak current increased, and the initial discharge specific capacity increased from 186 mAh/g to 298 mAh/g at the current of 40 mA/g. After 50 cycles, the capacity decay of DMcT/PAn compo-(site) decreased from 68.8% to 37.3%. The results indicated that the redox reaction of DMcT/PAn was accelerated, the discharge specific capacity and the cycle stability of DMcT/PAn could be improved by doping CuC_2O_4.