摘要
介绍了最近开发的1200V和1700VIGBT模块的特性。该模块由沟槽栅极和电场截止结构的新型IGBT器件组装而成。由于采用了先进的封装技术,这种新型IGBT模块导致了更高的功率集成。进而,总功率损耗比常规IGBT模块的约减少了25%。
This paper presents the characteristics of newly developed 1200V and 1700V IGBT module. New IGBT devices with trench gate and Field-Stop structure are installed in this module. By connection with our advanced packaging technology,this new IGBT module leads to the higher power integration. Furthermore,total power dissipation can be reduced by approximately 25% over the conventional IGBT modules.
出处
《电力电子》
2004年第4期44-47,共4页
Power Electronics
